savantic semiconductor product specification silicon pnp power transistors 2SB903 description with to-220 package low collector saturation voltage large current capacity. complement to type 2sd1212 applications suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. high-speed switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -30 v v ebo emitter-base voltage open collector -6 v i c collector current -12 a i cm collector current-peak -20 a 1.75 p c collector power dissipation t c =25 35 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB903 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ max unit v (br)cbo collector-base breakdown voltage i c =-1ma ; i e =0 -60 v v (br)ceo collector-emitter breakdown voltage i c =-1ma ;r be = ; -30 v v (br)ebo emitter-base breakdown voltage i e =-1ma ; i c =0 -6 v v cesat collector-emitter saturation voltage i c =-5a, i b =-0.25a -0.5 v i cbo collector cut-offcurrent v cb =-40v;i e =0 -0.1 ma i ebo emitter cut-offcurrent v eb =-4v;i c =0 -0.1 ma h fe-1 dc current gain i c =-1a ; v ce =-2v 70 280 h fe-2 dc current gain i c =-6a ; v ce =-2v 30 f t transition frequency i c =-1a ; v ce =-5v 120 mhz switching times t on turn-on time 0.10 s t stg storage time 0.30 s t f fall time i c =-5a ;i b1 =-i b2 =-0.5a; v cc =-10v;r l =2 b 0.03 s h fe-1 classifications q r s 70-140 100-200 140-280
savantic semiconductor product specification 3 silicon pnp power transistors 2SB903 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SB903
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